CIQTEK SEM Solutions Highlighted at the 2nd IESMAT Electron Microscopy Day, Spain

Ga+ Focused Ion Beam Field Emission Scanning Electron Microscope   The CIQTEK DB550 Focused Ion Beam Scanning Electron Microscope (FIB-SEM) has a focused ion beam column for nano-analysis and specimen preparation. It utilizes “super tunnel” electron optics technology, low aberration, and non-magnetic objective design, and has the “low voltage, high resolution” feature to ensure its nanoscale analytical capabilities.   The ion columns facilitate a Ga+ liquid metal ion source with highly stable and high-quality ion beams to ensure nanofabrication capabilities. The DB550 is an all-in-one nano-analysis and fabrication workstation with an integrated nano-manipulator, gas injection system, and user-friendly GUI software.

Ultra High-Resolution Tungsten Filament Scanning Electron Microscope   The CIQTEK SEM3300 Scanning Electron Microscope (SEM) incorporates technologies such as "Super-Tunnel" electron optics, inlens electron detectors, and electrostatic & electromagnetic compound objective lens. By applying these technologies to the tungsten filament microscope, the long-standing resolution limit of such SEM is surpassed, enabling the tungsten filament SEM to perform low-voltage analysis tasks previously only achievable with field emission SEMs.

High-Performance and Universal Tungsten Filament SEM Microscope   The CIQTEK SEM3200 SEM Microscope is an excellent general-purpose Tungsten Filament Scanning Electron Microscope (SEM) with outstanding overall capabilities. Its unique Dual-anode electron gun structure ensures high resolution and improves image signal-to-noise ratio at low excitation voltages. Furthermore, it offers a wide range of optional accessories, making the SEM3200 a versatile analytical instrument with excellent expandability.

Ultra-High Resolution Field Emission Scanning Electron Microscopy (FESEM)   The CIQTEK SEM5000X is an ultra-high resolution FESEM with optimized electron optics column design, reducing overall aberrations by 30%, achieving ultra-high resolution of 0.6 nm@15 kV and 1.0 nm@1 kV. Its high resolution and stability make it advantageous in advanced nano-structural materials research, as well as the development and manufacturing of high-technology node semiconductor IC chips.